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| HTT1115S Silicon NPN Epitaxial Twin Transistor ADE-208-1440C(Z) Rev.3 Aug. 2001 Features * Include 2 transistors in a small size SMD package: SMFPAK-6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor 2SC5757 Outline SMFPAK-6 Pin Arrangement B1 6 Q1 E2 5 Q2 B2 4 6 5 4 1 2 3 Index band C1 1 1. Collector Q1 2. Emitter Q1 3. Collector Q2 E1 2 C2 3 4. Base Q2 5. Emitter Q2 6. Base Q1 Note: Marking is "EK1". HTT1115S Absolute Maximum Ratings (Ta = 25 C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 150 -55 to +150 Q1 15 4 1.5 50 Q2 10 3.5 1.5 80 Total 220* 150 -55 to +150 Unit V V V mA mW C C *Value on PCB. (FR-4(13 x 13 x 0.635 mm)) Electrical Characteristics (Q1) (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre fT |S21| NF 2 Min 15 100 10 13 Typ 130 13 16 1.0 Max 0.1 1 0.2 170 0.45 2.0 Unit V A A A pF GHz dB dB Test Condition IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz, Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50 Rev.3, Aug. 2001, page 2 of 10 HTT1115S Electrical Characteristics (Q2) (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre fT PG NF Min 10 80 4 7 Typ 100 0.8 6 12 1.5 Max 1 1 1.0 130 1.1 2.3 Unit V A A A pF GHz dB dB Test Condition IC = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz, Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50 Rev.3, Aug. 2001, page 3 of 10 HTT1115S Main Characteristics (Q1) Typical Output Characteristics 450 A 400 A I C (mA) Collector Current 0 A 50 I C (mA) 40 30 50 350 A Typical Forward Transfer Characteristics 50 VCE = 1 V 40 300 A 250 A 200 A 150 A Collector Current 30 20 20 100 A 10 IB = 50 A 10 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) 200 VCE = 1 V DC Current Transfer Ratio hFE Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio vs. Collector Current Reverse Transfer Capacitance vs. Collector to Base Voltage 0.5 IE = 0 f = 1MHz 0.4 0.3 0.2 100 0.1 0 1 2 5 10 20 50 100 0 0.4 0.8 1.2 1.6 2.0 Collector Current IC (mA) Collector to Base Voltage VCB (V) Rev.3, Aug. 2001, page 4 of 10 HTT1115S Gain Bandwidth Product vs. Collector Current f = 1 GHz 16 12 8 VCE = 1 V VCE = 2 V VCE = 2V |S21|2 (dB) 20 fT (GHz) 20 S21 Parameter vs. Collector Current 16 Gain Bandwidth Product 12 VCE = 1V 8 4 S21 Parameter 4 0 f = 900 MHz 1 2 5 10 20 50 100 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Noise Figure vs. Collector Current 5 f = 900MHz Noise Figure NF (dB) 4 VCE = 1 V 3 2 VCE = 2 V 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.3, Aug. 2001, page 5 of 10 HTT1115S Main Characteristics (Q2) Typical Output Characteristics 500 A A 50 450 A A 400 350 A 300 40 A 250 30 200 150 Typical Forward Transfer Characteristics 50 Collector Current Ic (mA) VCE = 1 V Collector Current IC (mA) 40 A 30 20 A 20 100 A 10 IB = 50 A 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) Reverse Transfer Capacitance Cre (pF) 200 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 1.6 Reverse Transfer Capacitance vs. Collector to Base Voltage IE = 0 f = 1MHz VCE = 1 V 1.4 1.2 1.0 100 0.8 0.6 0 0.4 0.8 1.2 1.6 2.0 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector to Base Voltage VCB (V) Rev.3, Aug. 2001, page 6 of 10 HTT1115S Gain Bandwidth Product vs. Collector Current f = 1 GHz 16 |S21|2 (dB) S21 Parameter vs. Collector Current 20 f = 900 MHz 20 fT (GHz) V CE = 2 V 16 VCE = 2 V V CE = 1 V Gain Bandwidth Product 12 V CE = 1 V 8 12 S21 Parameter 8 4 4 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Noise Figure vs. Collector Current 5 f = 900 MHz Noise Figure NF (dB) 4 3 2 VCE = 1 V VCE = 2 V 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.3, Aug. 2001, page 7 of 10 HTT1115S Collector Power Dissipation Curve Pc* (mW) 250 *: Value on PCB. (FR-4 (13 x13 x0.635 mm)) 200 2 devices total Collector Power Dissipation 150 100 50 0 50 100 150 200 Ambient temperature Ta (C) Rev.3, Aug. 2001, page 8 of 10 HTT1115S Package Dimensions As of July, 2001 Unit: mm 1.5 0.05 (0.2) 6-0.2 -0.05 0.15-0.05 +0.1 1.5 0.05 1.1 0.1 (0.2) (0.5) (0.5) 1.0 0.1 0.55MAX Hitachi Code JEDEC JEITA Mass (reference value) SMFPAK-6 -- Conforms 0.0025 g Rev.3, Aug. 2001, page 9 of 10 (0.1) (0.1) +0.1 HTT1115S Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.3, Aug. 2001, page 10 of 10 |
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